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| BF 414 NPN Silicon RF Transistor q BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type BF 414 Marking - Ordering Code Q62702-F517 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 45 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 30 40 4 25 3 300 150 - 55 ... + 150 Unit V mA mW C 350 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BF 414 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 20 V DC current gain IC = 4 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz RS = 60 fT - - Cce F - - 400 560 0.1 3 - - - - pF dB MHz V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 30 40 4 - 30 - - - - 80 - - - 60 - nA - V Values typ. max. Unit Semiconductor Group 2 |
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